Category

Other Products

Manufacturer

Diodes Incorporated

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

9.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 9.8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

47.5 nC @ 5 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4234 pF @ 20 V

Power Dissipation (Max)

1.45W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)