Category

Other Products

Manufacturer

Infineon Technologies

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

560 V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.9V @ 1.8mA

Gate Charge (Qg) (Max) @ Vgs

170 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4200 pF @ 25 V

Power Dissipation (Max)

284W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3-1

Package / Case

TO-247-3