Category

Other Products

Manufacturer

Nexperia

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50 V

Current - Continuous Drain (Id) @ 25°C

130mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10Ohm @ 130mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

45 pF @ 25 V

Power Dissipation (Max)

250mW (Tc)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3