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SI6562CDQ-T1-GE3
Part Number:
SI6562CDQ-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET N/P-CH 20V 6.7A 8TSSOP
Series:
TrenchFET®
Package:
Tape & Reel (TR)
Package/Case:
8-TSSOP (0.173", 4.40mm Width)
Downloads:
Datasheet SI6562CDQ-T1-GE3
PRODUCTS DETAIL
Category
Other Products
Manufacturer
Vishay
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6.7A, 6.1A
Rds On (Max) @ Id, Vgs
22mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 10V
Power - Max
1.6W, 1.7W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSSOP
Package / Case
8-TSSOP (0.173", 4.40mm Width)
IN STOCK
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Manufacturer's standard packaging