Category

Other Products

Manufacturer

Diodes Incorporated

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

5Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

175 pF @ 15 V

Power Dissipation (Max)

350mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X2-DFN1006-3

Package / Case

3-XFDFN