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SI2312CDS-T1-GE3
Part Number:
SI2312CDS-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 20V 6A SOT23-3
Series:
TrenchFET®
Package:
Tape & Reel (TR)
Package/Case:
TO-236-3, SC-59, SOT-23-3
Downloads:
Datasheet SI2312CDS-T1-GE3
PRODUCTS DETAIL
Category
Other Products
Manufacturer
Vishay
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
31.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
865 pF @ 10 V
Power Dissipation (Max)
1.25W (Ta), 2.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
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Manufacturer's standard packaging