Category

Other Products

Manufacturer

Diodes Incorporated

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100 mA

Voltage - Collector Emitter Breakdown (Max)

50 V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250 MHz

Power - Max

200 mW

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3