Category

Other Products

Manufacturer

Nexperia

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

78mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9 nC @ 4.5 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

618 pF @ 10 V

Power Dissipation (Max)

480mW (Ta), 6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3