Category

Other Products

Manufacturer

Diodes Incorporated

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 375mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

100 pF @ 25 V

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92

Package / Case

TO-226-3, TO-92-3 (TO-226AA)