Category

Other Products

Manufacturer

Diodes Incorporated

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

1.67A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

540mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350 pF @ 25 V

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-3

Package / Case

TO-261-4, TO-261AA