Category

Other Products

Manufacturer

Toshiba Electronic Devices and Storage Corporation

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

22.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

37 nC @ 10 V

Vgs (Max)

+10V, -20V

Input Capacitance (Ciss) (Max) @ Vds

1850 pF @ 10 V

Power Dissipation (Max)

41W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK+

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63