Category

Other Products

Manufacturer

Toshiba Electronic Devices and Storage Corporation

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20.4 nC @ 4.5 V

Vgs (Max)

+20V, -25V

Input Capacitance (Ciss) (Max) @ Vds

1150 pF @ 15 V

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-UDFNB (2x2)

Package / Case

6-WDFN Exposed Pad