Category

Other Products

Manufacturer

Texas Instruments

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual) Asymmetrical

FET Feature

Logic Level Gate, 5V Drive

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A

Rds On (Max) @ Id, Vgs

14.3mOhm @ 4A, 8V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

662pF @ 15V

Power - Max

6W

Operating Temperature

125°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSON (3.3x3.3)

Package / Case

8-PowerTDFN