Category

Other Products

Manufacturer

Harris Corporation

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200 V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Rds On (Max) @ Id, Vgs

400mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

800 pF @ 25 V

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3