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SIS407ADN-T1-GE3
Part Number:
SIS407ADN-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET P-CH 20V 18A PPAK1212-8
Series:
TrenchFET®
Package:
Tape & Reel (TR)
Package/Case:
PowerPAK® 1212-8
Downloads:
Datasheet SIS407ADN-T1-GE3
PRODUCTS DETAIL
Category
Other Products
Manufacturer
Vishay
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
9mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
168 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
5875 pF @ 10 V
Power Dissipation (Max)
3.7W (Ta), 39.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
IN STOCK
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Manufacturer's standard packaging