Category

Other Products

Manufacturer

Vishay

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5.3A, 3.9A

Rds On (Max) @ Id, Vgs

58mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V, 22nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

665pF @ 15V, 650pF @ 15V

Power - Max

3.1W, 3.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)