Category

Other Products

Manufacturer

STMicroelectronics

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V, 20V

Rds On (Max) @ Id, Vgs

67mOhm @ 20A, 20V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

73 nC @ 20 V

Vgs (Max)

+22V, -10V

Input Capacitance (Ciss) (Max) @ Vds

1370 pF @ 400 V

Power Dissipation (Max)

240W (Tc)

Operating Temperature

-55°C ~ 200°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Through Hole

Supplier Device Package

HiP247™

Package / Case

TO-247-3