Category

Other Products

Manufacturer

onsemi

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.6A, 2.3A

Rds On (Max) @ Id, Vgs

65mOhm @ 3.8A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

271pF @ 10V

Power - Max

710mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WDFN (2x2)

Package / Case

6-WDFN Exposed Pad