Category

Other Products

Manufacturer

Fairchild Semiconductor

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual) Asymmetrical

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13A, 18A

Rds On (Max) @ Id, Vgs

8mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1765pF @ 15V

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN