Category

Other Products

Manufacturer

onsemi

Technology

MOSFET (Metal Oxide)

Configuration

2 N and 2 P-Channel (Full Bridge)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

100V, 80V

Current - Continuous Drain (Id) @ 25°C

3.4A, 2.6A

Rds On (Max) @ Id, Vgs

110mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

210pF @ 50V, 850pF @ 40V

Power - Max

2.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

12-MLP (5x4.5)

Package / Case

12-WDFN Exposed Pad