Category

Other Products

Manufacturer

onsemi

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

150mOhm @ 2.2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.2 nC @ 4.5 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

369 pF @ 10 V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

960mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6

Package / Case

SOT-23-6 Thin, TSOT-23-6