Category

Other Products

Manufacturer

Nexperia

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

720mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

850mOhm @ 720mA, 10V

Vgs(th) (Max) @ Id

2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.92 nC @ 10 V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

28 pF @ 30 V

Power Dissipation (Max)

420mW (Ta), 4.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Surface Mount, Wettable Flank

Supplier Device Package

DFN1110D-3

Package / Case

3-XDFN Exposed Pad