Category

Other Products

Manufacturer

Texas Instruments

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12 V

Current - Continuous Drain (Id) @ 25°C

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

53mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.8 nC @ 4.5 V

Vgs (Max)

-6V

Input Capacitance (Ciss) (Max) @ Vds

512 pF @ 6 V

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-DSBGA (1x1)

Package / Case

4-UFBGA, DSBGA