Category

Other Products

Manufacturer

Infineon Technologies

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

Drain to Source Voltage (Vdss)

30V

Rds On (Max) @ Id, Vgs

29mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 25V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)