Category

Other Products

Manufacturer

Texas Instruments

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80 V

Current - Continuous Drain (Id) @ 25°C

150A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 100A, 6V

Vgs(th) (Max) @ Id

3.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

76 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7820 pF @ 40 V

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3