Category

Other Products

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100mA

Rds On (Max) @ Id, Vgs

3.6Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id

1.5V @ 100µA

Input Capacitance (Ciss) (Max) @ Vds

13.5pF @ 3V

Power - Max

300mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

US6

Package / Case

6-TSSOP, SC-88, SOT-363