Category

Other Products

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4A

Rds On (Max) @ Id, Vgs

46mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 10V

Power - Max

1W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-µDFN (2x2)

Package / Case

6-WDFN Exposed Pad