Category

Other Products

Manufacturer

Diodes Incorporated

Technology

MOSFET (Metal Oxide)

Configuration

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.03A

Rds On (Max) @ Id, Vgs

750mOhm @ 430mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.62nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

59.76pF @ 16V

Power - Max

530mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-563

Package / Case

SOT-563, SOT-666