Category

Other Products

Manufacturer

Diodes Incorporated

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7.5A

Rds On (Max) @ Id, Vgs

15.5mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1550pF @ 10V

Power - Max

1.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2030-6 (Type B)

Package / Case

6-UDFN Exposed Pad