Category

Other Products

Manufacturer

STMicroelectronics

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

65A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

69mOhm @ 40A, 20V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

122 nC @ 20 V

Vgs (Max)

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds

1900 pF @ 400 V

Power Dissipation (Max)

318W (Tc)

Operating Temperature

-55°C ~ 200°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

HiP247™

Package / Case

TO-247-3