Category

Other Products

Manufacturer

EPC

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

200 V

Current - Continuous Drain (Id) @ 25°C

8.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

42mOhm @ 7A, 5V

Vgs(th) (Max) @ Id

2.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

2.9 nC @ 5 V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

288 pF @ 100 V

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die