Category

Other Products

Manufacturer

Wolfspeed

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

66A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

53.5mOhm @ 33.3A, 15V

Vgs(th) (Max) @ Id

3.6V @ 9.2mA

Gate Charge (Qg) (Max) @ Vgs

99 nC @ 15 V

Vgs (Max)

+15V, -4V

Input Capacitance (Ciss) (Max) @ Vds

2900 pF @ 1000 V

Power Dissipation (Max)

326W (Tc)

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-4L

Package / Case

TO-247-4