Category

Other Products

Manufacturer

UMW

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

1A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.8 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

150 pF @ 25 V

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA