Category

Other Products

Manufacturer

onsemi

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V, 20V

Current - Continuous Drain (Id) @ 25°C

5.5A, 4A

Rds On (Max) @ Id, Vgs

30mOhm @ 5.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 10V

Power - Max

900mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)