Category

Other Products

Manufacturer

Fairchild Semiconductor

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual) Asymmetrical

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc)

Rds On (Max) @ Id, Vgs

10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA, 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V, 34nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1605pF @ 15V, 2060pF @ 15V

Power - Max

1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN