Category

Other Products

Manufacturer

Texas Instruments

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Half Bridge)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

40A

Rds On (Max) @ Id, Vgs

6mOhm @ 20A, 8V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1870pF @ 12.5V

Power - Max

13W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-LSON (5x6)

Package / Case

8-PowerLDFN