Category

Other Products

Manufacturer

Texas Instruments

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Half Bridge)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A

Rds On (Max) @ Id, Vgs

16.3mOhm @ 8A, 8V

Vgs(th) (Max) @ Id

1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

564pF @ 15V

Power - Max

4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-PTAB (3x2.5)

Package / Case

5-LGA