Category

Other Products

Manufacturer

Alpha and Omega Semiconductor, Inc.

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

68A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

43mOhm @ 20A, 15V

Vgs(th) (Max) @ Id

2.8V @ 17.5mA

Gate Charge (Qg) (Max) @ Vgs

104 nC @ 15 V

Vgs (Max)

+18V, -8V

Input Capacitance (Ciss) (Max) @ Vds

2908 pF @ 800 V

Power Dissipation (Max)

300W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Through Hole

Supplier Device Package

TO-247-4L

Package / Case

TO-247-4