Category

Other Products

Manufacturer

Toshiba Electronic Devices and Storage Corporation

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

42.7mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12.8 nC @ 4.5 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

840 pF @ 10 V

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

UF6

Package / Case

6-SMD, Flat Leads