Category

Other Products

Manufacturer

Toshiba Electronic Devices and Storage Corporation

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

2.2Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

12 pF @ 10 V

Power Dissipation (Max)

100mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

CST3

Package / Case

SC-101, SOT-883