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SI2312BDS-T1-GE3

  • Part Number:
  • SI2312BDS-T1-GE3
  • Manufacturer:
  • Vishay
  • Description:
  • MOSFET N-CH 20V 3.9A SOT23-3
  • Series:
  • TrenchFET®
  • Package:
  • Tape & Reel (TR)
  • Package/Case:
  • TO-236-3, SC-59, SOT-23-3
PRODUCTS DETAIL
Category
Other Products
Manufacturer
Vishay
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 4.5 V
Vgs (Max)
±8V
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
IN STOCK

US inventory can be shipped immediately

Quantity:
Manufacturer's standard packaging