Category

Other Products

Manufacturer

Diodes Incorporated

Technology

MOSFET (Metal Oxide)

Configuration

4 N-Channel (Full Bridge)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.4A

Rds On (Max) @ Id, Vgs

300mOhm @ 1.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

166pF @ 40V

Power - Max

1.6W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SM8

Package / Case

SOT-223-8