Category

Other Products

Manufacturer

ROHM Semiconductor

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.5A

Rds On (Max) @ Id, Vgs

240mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

80pF @ 10V

Power - Max

1W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TUMT6

Package / Case

6-SMD, Flat Leads