Category

Other Products

Manufacturer

ROHM Semiconductor

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate, 1.5V Drive

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.5A

Rds On (Max) @ Id, Vgs

72mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

3.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 10V

Power - Max

1W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSST

Package / Case

8-SMD, Flat Leads