Category

Other Products

Manufacturer

STMicroelectronics

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A, 30A

Rds On (Max) @ Id, Vgs

21mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

4.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

475pF @ 24V

Power - Max

60W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6)

Package / Case

8-PowerVDFN