Category

Other Products

Manufacturer

Infineon Technologies

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

8.83A (Ta)

Rds On (Max) @ Id, Vgs

300mOhm @ 6.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

420 pF @ 25 V

Power Dissipation (Max)

42W (Tc)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63