Category

Other Products

Manufacturer

ROHM Semiconductor

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

45 V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

460mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.3 nC @ 5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

160 pF @ 10 V

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TUMT3

Package / Case

3-SMD, Flat Leads