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RFD3N08LSM9A
Part Number:
RFD3N08LSM9A
Manufacturer:
Harris Corporation
Description:
N-CHANNEL POWER MOSFET
Series:
-
Package:
Bulk
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Downloads:
Datasheet RFD3N08LSM9A
PRODUCTS DETAIL
Category
Other Products
Manufacturer
Harris Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
800mOhm @ 3A, 5V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.5 nC @ 10 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
125 pF @ 25 V
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
IN STOCK
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Manufacturer's standard packaging