Category

Other Products

Manufacturer

ROHM Semiconductor

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

510mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

35 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1300 pF @ 25 V

Power Dissipation (Max)

50W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FM

Package / Case

TO-220-3 Full Pack