Category

Other Products

Manufacturer

Infineon Technologies

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

8.8A (Ta), 19A (Tc)

Rds On (Max) @ Id, Vgs

16mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

8.7 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

600 pF @ 25 V

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-6

Package / Case

6-PowerVDFN